M28W800BT-100N6

M28W800BT100N6T, Flash Memory, 13 V, 10μs, TSOP

Rated 5 Rating 5 | reviews | Write a review

Price:: US $0.90~1.10 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
	US $0.90~1.10

PartNumber:: M28W800BT-100N6

Brand:: STMicroelectronics - ST | Pack: TSOP | D/C: 03+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

Place Order via Escrow Service

Sold By

Ms. Constance's store

(China (Mainland))

add to my favourite

100% Positive feedback

Detailed seller ratings

Visit Store

Contact Now

Esrcow Service

Place orders confidently and securely via it

Safe payments
Quick and easy transactions
Free service charges

Learn More >>

Previous Next

Products Upload time: 2012-05-16

From Other Seller

Part Number:M28W800BT-100N6
US $0.90 - 1.10
74AHC2G08VS SOP-8

US $2.00 - 2.00 / Piece
(0) Remove
LM64P101

US $240.00 - 300.00 / Piece
(0) Remove
Quantity:

piece

Product Summary

The M28W800BT-100N6 is an 8 Mbit (512Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/O pin down to 1.65V. An optional 12V VPP power supply is provided to speed up customer programming.The M28W800BT-100N6 features an asymmetrical blocked architecture. The M28W800BT-100N6 has an array of 23 blocks: 8 Parameter Blocks of 4 KWord and 15 Main Blocks of 32 KWord. The M28W800BT-100N6 has the Parameter Blocks at the top of the memory address space while the M28W800BT-100N6 locates the Parameter Blocks starting from the bottom.

Parametrics

M28W800BT-100N6 absolute maximum ratings: (1)TA Ambient Operating Temperature: –40 to 85 °C; (2)TBIAS Temperature Under Bias: –40 to 125 °C; (3)TSTG Storage Temperature: –55 to 155 °C; (4)VIO Input or Output Voltage: –0.6 to VDDQ+0.6 V; (5)VDD, VDDQ Supply Voltage: –0.6 to 4.1 V; (6)VPP Program Voltage: –0.6 to 13 V.

Features

M28W800BT-100N6 features: (1)ACCESS TIME: 70, 85, 90,100ns; (2)PROGRAMMING TIME: 10μs typical; Double Word Programming Option; (3)COMMON FLASH INTERFACE: 64 bit Security Code; (4)MEMORY BLOCKS: Parameter Blocks (Top or Bottom location); Main Blocks; (5)BLOCK PROTECTION on TWO PARAMETER: BLOCKS; WPfor Block Protection; (6)AUTOMATIC STAND-BY MODE; (7)PROGRAM and ERASE SUSPEND; (8)100,000 PROGRAM/ERASE CYCLES per: BLOCK; (9)ELECTRONIC SIGNATURE: Manufacturer Code: 20h; Top Device Code, M28W800BT: 8892h; Bottom Device Code, M28W800BB: 8893h.