Product Summary

The K4M28163PF-RG1L is a 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design of the K4M28163PF-RG1L allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the K4M28163PF-RG1L to be useful for a variety of high bandwidth and high performance memory system applications.

Parametrics

K4M28163PF-RG1L absolute maximum ratings: (1)voltage on any pin relative to Vss: -1.0V to 2.6V; (2)voltage on Vdd supply relative to Vss: -1.0V to 2.6V; (3)storage temperature: -55℃ to +150℃; (4)power dissipation: 1W; (5)short circuit current: 50mA.

Features

K4M28163PF-RG1L features: (1)1.8V power supply; (2)LVCMOS compatible with multiplexed address; (3)Four banks operation; (4)MRS cycle with address key programs; (5)EMRS cycle with address key programs; (6)All inputs are sampled at the positive going edge of the system clock; (7)Burst read single-bit write operation; (8)DQM for masking; (9)Auto refresh; (10)64ms refresh period (4K cycle); (11)Commercial Temperature Operation.

Diagrams

K4M28163PF-RG1L block diagram

K4M28163PF-R(B)G/F
K4M28163PF-R(B)G/F
Other

Data Sheet
Negotiable