(China (Mainland))
Product Summary
The IDRD51-0-A1F1C-32C is a 512Mbit XDR DRAM. It is a general-purpose high-performance memory device suitable for use in a broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low latency are required. The IDRD51-0-A1F1C-32C is a CMOS DRAM organized as 32M words by 16 bits. The use of Differential Rambus Signaling Level (DRSL) technology permits 4000/3200 Mb/s transfer rates while using conventional system and board design technologies. The IDRD51-0-A1F1C-32C is capable of sustained data transfers of 8000/6400 MB/s.
Parametrics
IDRD51-0-A1F1C-32C absolute maximum ratings: (1)θJC Junction-to-case thermal resistance: 3.8 ℃/Watt; (2)II,RSL RSL RQ or Serial Interface input current @ (VIN=VIH,RQ,MAX): -10 to 10 μA; (3)IREF,RSL VREF,RSL current @ VREF,RSL,MAX flowing into VREF pin: -10 to 10 μA; (4)VOSW,DQ DRSL DQ outputs - high-low swing: 0.200 to 0.400 V; (5)RTERM,DQ DRSL DQ outputs - termination resistance: 40.0 to 60.0 Ω; (6)VOL,SI RSL serial interface SDO output - low voltage: 0 to 0.250 V.
Features
IDRD51-0-A1F1C-32C features: (1)Highest pin bandwidth available; (2)Highest sustained bandwidth per DRAM device; (3)Low latency; (4)Low power.
Diagrams
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IDRD51-0-A1F1C-40D |
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