(China (Mainland))
Product Summary
The K4S643232H-TC60 is a 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the K4S643232H-TC60 to be useful for a variety of high bandwidth, high performance memory system applications.
Parametrics
K4S643232H-TC60 absolute maximum ratings: (1)Voltage on any pin relative to Vss, VIN, VOUT: -1.0 ~ 4.6 V; (2)Voltage on VDD supply relative to Vss, VDD, VDDQ: -1.0 ~ 4.6 V; (3)Storage temperature, TSTG: -55 ~ +150℃; (4)Power dissipation, PD: 1W; (5)Short circuit current, IOS: 50 mA.
Features
K4S643232H-TC60 features: (1)JEDEC standard 3.3V power supply; (2)LVTTL compatible with multiplexed address; (3)Four banks operation ; (4)MRS cycle with address key programs; (5)All inputs are sampled at the positive going edge of the system clock; (6)Burst read single-bit write operation; (7)DQM for masking; (8)Auto & self refresh; (9)64ms refresh period(4K Cycle).
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K4S640432H-TC(L)75 |
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K4S640432H-UC |
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K4S640832C |
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K4S640832D |
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