(China (Mainland))
Product Summary
The K6R1016C1C-JC12 is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The K6R1016C1C-JC12 uses 16 common input and output lines and has at output enable pin which operates faster than address access time at read cycle. Also it allows that lower and upper byte access by data byte control (UB, LB). The K6R1016C1C-JC12 is fabricated using SAMSUNG’s advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high speed system applications. The K6R1016C1C-JC12 is packaged in a 400mil 44-pin plastic SOJ or TSOP2 forward or 48-Fine pitch BGA.
Parametrics
K6R1016C1C-JC12 absolute maximum ratings: (1)Voltage on Any Pin Relative to VSS, VIN, VOUT: -0.5 to VCC+0.5 V; (2)Voltage on VCC Supply Relative to VSS, VCC: -0.5 to 7.0 V; (3)Power Dissipation, Pd: 1 W; (4)Storage Temperature, TSTG: -65 to 150℃; (5)Operating Temperature, TA: 0 to 70℃.
Features
K6R1016C1C-JC12 features: (1)Fast Access Time 10,12,15ns(Max.); (2)Low Power Dissipation; (3)Single 5.0V±10% Power Supply; (4)TTL Compatible Inputs and Outputs; (5)I/O Compatible with 3.3V Device; (6)Fully Static Operation; (7)Three State Outputs; (8)2V Minimum Data Retention: L-ver. only; (9)Center Power/Ground Pin Configuration; (10)Data Byte Control: LB: I/O1~ I/O8, UB: I/O9~ I/O16; (11)Standard Pin Configuration.
Diagrams
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 K6R1004C1C-C |
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K6R1004C1C-I |
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K6R1004C1C-L |
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K6R1004C1C-P |
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K6R1004C1D |
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K6R1004V1C-C |
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