(China (Mainland))
Product Summary
The K6X1008T2D-TF70000 is a 128K×8 bit Super Low Power and Low Voltage full CMOS Static RAM. The device is fabricated by SAMSUNG’s advanced CMOS process technology. The K6X1008T2D-TF70000 supports verious operating temperature ranges and have various package types for user flexibility of system design. The K6X1008T2D-TF70000 also supports low data retention voltage for battery back-up operation with low data retention current.
Parametrics
K6X1008T2D-TF70000 absolute maximum ratings: (1)Voltage on any pin relative to Vss, VIN,VOUT: -0.2 to VCC+0.3V(Max. 3.9V); (2)Voltage on Vcc supply relative to Vss, VCC: -0.2 to 3.9 V; (3)Power Dissipation, PD: 1.0 W; (4)Storage temperature, TSTG: -65 to 150℃; (5)Operating Temperature, TA: 0 to 70℃.
Features
K6X1008T2D-TF70000 features: (1)Process Technology: Full CMOS; (2)Organization: 128K×8; (3)Power Supply Voltage: 2.7~3.6V; (4)Low Data Retention Voltage: 1.5V(Min); (5)Three state outputs; (6)Package Type: 32-SOP-525, 32-TSOP1-0820F 32-SOP-525, 32-TSOP1-0820F.
Diagrams
 |
 K6X1008C2D-B |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
K6X1008C2D-BF55 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
K6X1008C2D-F |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
K6X1008C2D-Q |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
K6X1008T2D-B |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
K6X1008T2D-F |
Other |
|
Data Sheet |
Negotiable |
|
||||
