(China (Mainland))
Product Summary
The K6F8016U6D-XF55 is a 512K×16 bit Super Low Power and Low Voltage Full CMOS Static RAM. The device is fabricated by SAMSUNG’s advanced full CMOS process technology. The K6F8016U6D-XF55 supports industrial operating temperature ranges and have chip scale package for user flexibility of system design. The K6F8016U6D-XF55 also supports low data retention voltage for battery back-up operation with low data retention current.
Parametrics
K6F8016U6D-XF55 absolute maximum ratings: (1)Voltage on any pin relative to Vss, VIN, VOUT: -0.5 to VCC+0.3V(Max. 3.6V) V; (2)Voltage on Vcc supply relative to Vss, VCC: -0.3 to 3.6 V; (3)Power Dissipation, PD: 1.0 W; (4)Storage temperature, TSTG: -65 to 150℃; (5)Operating Temperature, TA: -40 to 85℃.
Features
K6F8016U6D-XF55 features: (1)Process Technology: Full CMOS; (2)Organization: 512K×16; (3)Power Supply Voltage: 2.7~3.3V; (4)Low Data Retention Voltage: 1.5V(Min); (5)Three State Outputs; (6)Package Type: 48-FBGA-6.00×7.00.
Diagrams
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K6F8016U6D |
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K6F8016V3A |
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K6F8016U6C |
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K6F8016U6B |
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K6F8016T6C |
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