(China (Mainland))
Product Summary
The TC59LM814BFT-24 is an Network FCRAMTM. The TC59LM814BFT-24 is Network FCRAMTM containing 268,435,456 memory cells. The TC59LM814BFT-24 is organized as 4,194,304-words × 4 banks s× 16bits, the TC59LM814BFT-24 is organized as 8,388,608 words × 4 banks × 8 bits. The TC59LM814BFT-24 features a fully synchronous operation referenced to clock edge whereby all operations are synchronized at a clock input which enables high performance and simple user interface coexistence. The TC59LM814BFT-24 can operate fast core cycle using the FCRAMTM core architecture compared with regular DDR SDRAM.
Parametrics
TC59LM806BFT-22 absolute maximum ratings: (1)VDD Power Supply Voltage: -0.3~ 3.3 V; (2)VDDQ Power Supply Voltage (for I/O buffer): -0.3~VDD+ 0.3 V; (3)VIN Input Voltage: -0.3~VDD+ 0.3 V; (4)VOUT DQ pin Voltage: -0.3~VDDQ + 0.3 V; (5)VREF Input Reference Voltage: -0.3~3.3 V; (6)Topr Operating Temperature: 0~70 °C; (7)Tstg Storage Temperature: -55~150 °C; (8)Tsolder Soldering Temperature (10 s): 260 °C; (9)PD Power Dissipation: 1 W; (10)IOUT Short Circuit Output Current: ±50 mA.
Features
TC59LM806BFT-22 features: (1)Quad Independent Banks operation; (2)Fast cycle and Short Latency; (3)Bidirectional Data Strobe Signal; (4)Distributed Auto-Refresh cycle in 7.8 μs; (5)Self-Refresh; (6)Power Down Mode; (7)Variable Write Length Control; (8)Write Latency = CAS Latency-1.
Diagrams
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