(China (Mainland))
Product Summary
The K6R4016V1C-TI10000 is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016V1C-TI10000 uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that lower and upper byte access by data byte control(UB, LB). The K6R4016V1C-TI10000 is fabricated using SAMSUNG’s advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R4016V1C-TI10000 is packaged in a 400mil 44-pin plastic SOJ or TSOP(II) forward or 48 Fine pitch BGA.
Parametrics
K6R4016V1C-TI10000 absolute maximum ratings: (1)Voltage on Any Pin Relative to VSS, VIN, VOUT: -0.5 to 4.6V; (2)Voltage on VCC Supply Relative to VSS, VCC: -0.5 to 4.6 V; (3)Power Dissipation, Pd: 1 W; (4)Storage Temperature, TSTG: -65 to 150℃; (5)Operating Temperature, TA: 0 to 70℃.
Features
K6R4016V1C-TI10000 features: (1)Fast Access Time 10,12,15ns(Max.); (2)Low Power Dissipation; (3)Single 3.3±0.3V Power Supply; (4)TTL Compatible Inputs and Outputs; (5)I/O Compatible with 3.3V Device; (6)Fully Static Operation; (7)Three State Outputs; (8)2V Minimum Data Retention: L-ver. only; (9)Center Power/Ground Pin Configuration; (10)Data Byte Control: LB: I/O1~ I/O8, UB: I/O9~ I/O16; (11)Standard Pin Configuration.
Diagrams
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