Product Summary

The EDD5116AGTA-5B-E is a 512M bits DDR SDRAM.

Parametrics

EDD5116AGTA-5B-E absolute maximum ratings: (1)Voltage on any pin relative to VSS, VT: -1.0 to +3.6 V; (2)Supply voltage relative to VSS, VDD: -1.0 to +3.6 V; (3)Short circuit output current, IOS: 50 mA; (4)Power dissipation, PD: 1.0 W; (5)Operating ambient temperature, TA: 0 to +70℃; (6)Storage temperature, Tstg: -55 to +125℃.

Features

EDD5116AGTA-5B-E features: (1)Double-data-rate architecture; two data transfers per clock cycle; (2)The high-speed data transfer is realized by the 2 bits prefetch pipelined architecture; (3)Bi-directional data strobe (DQS) is transmitted /received with data for capturing data at the receiver; (4)Data inputs, outputs, and DM are synchronized with DQS; (5)DQS is edge-aligned with data for READs; centeraligned with data for WRITEs; (6)Differential clock inputs (CK and /CK); (7)DLL aligns DQ and DQS transitions with CK transitions; (8)Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS; (9)Data mask (DM) for write data.

Diagrams

EDD5116AGTA-5B-E block diagram

EDD5104ABTA
EDD5104ABTA

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Data Sheet

Negotiable 
EDD5104ADTA
EDD5104ADTA

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Data Sheet

Negotiable 
EDD5104ADTA-E
EDD5104ADTA-E

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Data Sheet

Negotiable 
EDD5108ABTA
EDD5108ABTA

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Negotiable 
EDD5108ADTA
EDD5108ADTA

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Data Sheet

Negotiable 
EDD5108ADTA-5C
EDD5108ADTA-5C

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Data Sheet

Negotiable