(China (Mainland))
Product Summary
The K4D261638F-TC36 is a 128Mbit GDDR SDRAM. It is organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 1.6GB/s/chip. I/O transactions of the K4D261638F-TC36 are possible on both edges of the clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the K4D261638F-TC36 to be useful for a variety of high performance memory system applications.
Parametrics
K4D261638F-TC36 absolute maximum ratings: (1)Voltage on any pin relative to Vss VIN, VOUT: -0.5 to 3.6 V; (2)Voltage on VDD supply relative to Vss VDD: -1.0 to 3.6 V; (3)Voltage on VDD supply relative to Vss VDDQ: -0.5 to 3.6 V; (4)Storage temperature TSTG: -55 to +150 ℃; (5)Power dissipation PD: 2.0 W; (6)Short circuit current IOS: 50 mA.
Features
K4D261638F-TC36 features: (1)2.5V ± 5% power supply for device operation; (2)2.5V ± 5% power supply for I/O interface; (3)SSTL_2 compatible inputs/outputs; (4)4 banks operation; (5)MRS cycle with address key programs; (6)All inputs except data & DM are sampled at the positive going edge of the system clock; (7)Differential clock input; (8)No Wrtie-Interrupted by Read Function; (9)Data I/O transactions on both edges of Data strobe; (10)DLL aligns DQ and DQS transitions with Clock transition; (11)Edge aligned data & data strobe output; (12)Center aligned data & data strobe input.
Diagrams
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K4D261638F |
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K4D263238A-GC |
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K4D263238A-GC33 |
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K4D263238E-GC |
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K4D263238E-GC33 |
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