(China (Mainland))
Product Summary
The K6F4016R4E-EF85 is a 256K × 16 bit Super Low Power and Low Voltage Full CMOS Static RAM. The device is fabricated by SAMSUNG’s advanced full CMOS process technology. The K6F4016R4E-EF85 supports industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The K6F4016R4E-EF85 also supports low data retention voltage for battery back-up operation with low data retention current.
Parametrics
K6F4016R4E-EF85 absolute maximum ratings: (1)Voltage on any pin relative to Vss, VIN,VOUT: -0.5 to VCC+0.3V(Max. 2.5V) V; (2)Voltage on Vcc supply relative to Vss, VCC: -0.3 to 2.5 V; (3)Power Dissipation, PD: 1.0 W; (4)Storage temperature, TSTG: -65 to 150℃; (5)Operating Temperature, TA: -40 to 85℃.
Features
K6F4016R4E-EF85 features: (1)Process Technology: Full CMOS; (2)Organization: 256K×16 bit; (3)Power Supply Voltage: 1.65~2.20V; (4)Low Data Retention Voltage: 1.0V(Min); (5)Three State Outputs; (6)Package Type: 48-TBGA-6.00×7.00.
Diagrams
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K6F4016U4G |
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K6F4008U2G |
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