Product Summary
The K6T4016U3C-TF85 is a 256K×16 bit Low Power and Low Voltage CMOS Static RAM. The K6T4016U3C-TF85 is fabricated by SAMSUNG’s advanced CMOS process technology. The device supports various operating temperature ranges and have various package types for user flexibility of system design. The K6T4016U3C-TF85 also supports low data retention voltage for battery back-up operation with low data retention current.
Parametrics
K6T4016U3C-TF85 absolute maximum ratings: (1)Voltage on any pin relative to Vss, VIN,VOUT: -0.5 to VCC+0.5 V; (2)Voltage on Vcc supply relative to Vss, VCC: -0.3 to 4.6 V; (3)Power Dissipation, PD: 1.0 W; (4)Storage temperature, TSTG: -65 to 150℃; (5)Operating Temperature, TA: 0 to 70℃.
Features
K6T4016U3C-TF85 features: (1)Process Technology: TFT; (2)Organization: 256K×16; (3)Power Supply Voltage: 2.7~3.3V; (4)Low Data Retention Voltage: 2V(Min); (5)Three State Outputs ; (6)Package Type: 44-TSOP2-400F/R.
Diagrams
K6T4008C1B |
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K6T4008U1C-B |
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K6T4008U1C-F |
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K6T4008V1C-B |
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K6T4008V1C-F |
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K6T4016U3C |
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