(China (Mainland))
Product Summary
The KM416V1204BT-L5 is a 1048576×16 bit extended data out CMOS DRAM. It is fabricated using Samsung’s advanced CMOS process to realize high band-width, low power consumption and high reliability. The KM416V1204BT-L5 may be used as main memory unit for microcomputer, personal computer and portable machines.
Parametrics
KM416V1204BT-L5 absolute maximum ratings: (1)voltage on any pin relative to VSS, VIN, VOUT: -0.3 to 7.0V; (2)voltage on VCC supply relative to VSS, VCC: -0.5 to 4.6V; (3)storage temperature, Tstg: -55 to 150℃; (4)power dissipation, PD: 1W; (5)short circuit output current, IOS: 50mA.
Features
KM416V1204BT-L5 features: (1)extended dataout mode operation; (2)2CAS byte/word read/write operation; (3)CAS-before-RAS refresh capability; (4)RAS-only and hidden refresh capability; (5)self-refresh capability; (6)TTL compatible inputs and outputs; (7)early write or output enable controlled write; (8)JEDEC standard pinout; (9)available in plastic SOJ and TSOP packages; (10)sinlge 5V+10% power supply.
Diagrams
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Fairchild Semiconductor |
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KM4100IC8TR3 |
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KM4100IT5 |
Fairchild Semiconductor |
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Negotiable |
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KM4100IT5TR3 |
Fairchild Semiconductor |
High Speed Operational Amplifiers 260Mhz RRO amp |
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Negotiable |
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KM4101 |
Other |
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Negotiable |
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KM4101IT6TR3 |
Fairchild Semiconductor |
High Speed Operational Amplifiers 260Mhz RRO amp |
Data Sheet |
Negotiable |
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