HYB18L512320BF-7.5

dynamic random-access memory, 1.70 V to 1.95 V, 90-ball PG-VFBGA

Rated 5 Rating 5 | reviews | Write a review

Price:: US $4.40~4.60 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
	US $4.40~4.60

PartNumber:: HYB18L512320BF-7.5

Brand:: Infineon Technologies AG - Infineon | Pack: BGA | D/C: 04+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

Place Order via Escrow Service

Sold By

Ms. Constance's store

(China (Mainland))

add to my favourite

100% Positive feedback

Detailed seller ratings

Visit Store

Contact Now

Esrcow Service

Place orders confidently and securely via it

Safe payments
Quick and easy transactions
Free service charges

Learn More >>

Previous Next

Products Upload time: 2012-05-10

From Other Seller

Part Number:HYB18L512320BF-7.5
US $4.40 - 4.60
EKZE250ELL152MK25S

US $0.10 - 1.00 / Piece
(0) Remove
EKY-160ELL121MF11D

US $0.10 - 1.00 / Piece
(0) Remove
Quantity:

piece

Product Summary

The HYB18L512320BF-7.5 is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. It is internally configured as a quad-bank DRAM. The HYB18L512320BF-7.5 achieves high speed data transfer rates by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to the system clock. Read and write accesses are burst-oriented; accesses start at a selected location and continue for a programmed number of locations (1, 2, 4, 8 or full page) in a programmed sequence. The HYB18L512320BF-7.5 operation is fully synchronous: all inputs are registered at the positive edge of CLK.

Parametrics

HYB18L512320BF-7.5 absolute maximum ratings: (1)Power Supply Voltage VDD: -0.3 to 2.7 V; (2)Power Supply Voltage for Output Buffer VDDQ: -0.3 to 2.7 V; (3)Input Voltage VIN: -0.3 to VDDQ + 0.3 V; (4)Output Voltage VOUT: -0.3 to VDDQ + 0.3 V; (5)Operation Case Temperature Commercial TC: 0 to +70 ℃, Extended: -25 to +85 ℃; (6)Storage Temperature TSTG: -55 to +150 ℃; (7)Power Dissipation PD: 1.0 W; (8)Short Circuit Output Current IOUT: 50 mA.

Features

HYB18L512320BF-7.5 features: (1)4 banks × 4 Mbit ?32 organization (dual-die); (2)Fully synchronous to positive clock edge; (3)Four internal banks for concurrent operation; (4)Programmable CAS latency: 2, 3; (5)Programmable burst length: 1, 2, 4, 8 or full page; (6)Programmable wrap sequence: sequential or interleaved; (7)Programmable drive strength: full, 1/2, 1/4 and 1/8; (8)Auto refresh and self refresh modes; (9)Refresh cycles: 8192 refresh cycles / 64 ms; (10)Auto precharge; (11)Commercial (-0℃ to +70℃) and Extended (-25℃ to +85℃) operating temperature range; (12)Package: Dual-Die 90-ball PG-TFBGA package (13.0 × 8.0 × 1.2 mm); (13)RoHS Compliant Products.