(China (Mainland))
Product Summary
The TC55V1001AF-85 is a 1,048,576-bit static random access memory (SRAM) organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, the TC55V1001AF-85 operates from a single 2.7 to 3.6 V power supply. Advanced circuit technology provides both high speed and low power at an operating current of 3 mA/MHz and a minimum cycle time of 85 ns. The TC55V1001AF-85 is well suited to various microprocessor system applications where high speed, low power and battery backup are required.
Parametrics
TC55V1001AF-85 absolute maximum ratings: (1)VDD Power Supply Voltage: - 0.3 to 4.6 V; (2)V|N Input Voltage: - 0.3 to 4.6V; (3)Vl/0 Input/Output Voltage: - 0.5 to VDD + 0.5 V; (4)PD Power Dissipation: 0.8 W; (5)Tsolder Soldering Temperature (10 s): 260 ℃; (6)Tstrg. Storage Temperature: - 55 to 150 ℃; (7)Topr. Operating Temperature: 0 to 70 ℃.
Features
TC55V1001AF-85 features: (1)Low-power dissipation; (2)Operating: 10.8 mW/MHz (typical); (3)Single power supply voltage of 2.7 to 3.6 V Power down features using CE1 and CE2. Data retention supply voltage of 2 to 3.6 V Direct TTL compatibility for all inputs and outputs; (4)Standby current (Ta = 25℃ maximum).
Diagrams
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 TC55 |
Cornell Dubilier |
Aluminum Electrolytic Capacitors - Leaded 20uF 250V |
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TC55 Series |
Other |
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Negotiable |
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TC55100185L |
Other |
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Data Sheet |
Negotiable |
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TC551001BFL |
Other |
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Data Sheet |
Negotiable |
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TC551001BFTL |
Other |
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Data Sheet |
Negotiable |
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TC551001BPL |
Other |
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Data Sheet |
Negotiable |
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