Product Summary

The EDL5132CBMA-10-E is a 512M bits Mobile RAM MCP (Multi Chip Package) organized as 4,194,304 words × 32 bits × 4 banks, 2 pieces of 256M bits Mobile RAM in one package. It is packaged in 90-ball FBGA.

Parametrics

EDL5132CBMA-10-E absolute maximum ratings: (1)Voltage on any pin relative to VSS, VT: -0.5 to +2.6 V; (2)Supply voltage relative to VSS VDD, VDDQ: -0.5 to +2.6 V; (3)Short circuit output current, IOS: 50 mA; (4)Power dissipation, PD: 1.0 W; (5)Operating ambient temperature, TA: -25 to +85℃; (6)Storage temperature, Tstg: -55 to +125℃.

Features

EDL5132CBMA-10-E features: (1)Low voltage power supply, VDD: 1.7V to 1.95V; VDDQ: 1.7V to 1.95V; (2)Wide temperature range (-25℃ to 85℃); (3)Programmable Partial Array Self Refresh; (4)Programmable Driver Strength; (5)Auto Temperature Compensated Self Refresh by built-in temperature sensor.; (6)Deep power down mode; (7)Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge; (8)Pulsed interface; (9)Possible to assert random column address in every cycle; (10)Quad internal banks controlled by BA0 and BA1; (11)Byte control by DQM; (12)Wrap sequence = Sequential/ Interleave; (13)/CAS latency (CL) = 2, 3; (14)Automatic precharge and controlled precharge; (15)Auto refresh and self refresh; (16)×32 organization; (17)8,192 refresh cycles/64ms; (18)Burst termination by Burst stop command and precharge command; (19)FBGA package with lead free solder (Sn-Ag-Cu).

Diagrams

EDL5132CBMA-10-E block diagram

EDL5132CBMA
EDL5132CBMA
Other

Data Sheet
Negotiable