(China (Mainland))
Product Summary
The K4S641632H-TI70 is a 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits. The K4S641632H-TI70 is fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the K4S641632H-TI70 to be useful for a variety of high bandwidth, high performance memory system applications.
Parametrics
K4S641632H-TI70 absolute maximum ratings: (1)Voltage on any pin relative to VSS:-1.0 to 4.6V; (2)Voltage on VDD supply relative to VSS:-1.0 to 4.6V; (3)Storage temperature:-55 to +150℃; (4)Power dissipation:1W; (5)Short circuit current:50mA.
Features
K4S641632H-TI70 features: (1)JEDEC standard 3.3V power supply ; (2)LVTTL compatible with multiplexed address; (3)Four banks operation ; (4)MRS cycle with address key programs: CAS latency (2 & 3), Burst length (1, 2, 4, 8 & Full page), Burst type (Sequential & Interleave); (5)All inputs are sampled at the positive going edge of the system clock ; (6)Burst read single-bit write operation; (7)DQM (x4,x8) & L(U)DQM (x16) for masking ; (8)Auto & self refresh; (9)64ms refresh period (4K cycle); (10)Pb-free Package ; (11)RoHS compliant.
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K4S640432H-TC(L)75 |
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K4S640432H-UC |
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K4S640832C |
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