Product Summary

The KM68V1000CLRI-7L is a 128K×8 bit Low Power and Low Voltage CMOS Static RAM. The device is fabricated by SAMSUNG’s advanced CMOS process technology. The KM68V1000CLRI-7L supports various operating temperature ranges and have various package types for user flexibility of system design. The KM68V1000CLRI-7L also supports low data retention voltage for battery back-up operation with low data retention current.

Parametrics

KM68V1000CLRI-7L absolute maximum ratings: (1)Voltage on any pin relative to Vss, VIN,VOUT: -0.5 to VCC+0.5 V; (2)Voltage on Vcc supply relative to, VCC: -0.3 to 4.6 V; (3)Power Dissipation, PD: 1.0 W; (4)Storage temperature, TSTG: -65 to 150℃; (5)Operating Temperature, TA: 0 to 70℃; (6)Soldering temperature and time, TSOLDER: 260℃, 10sec (Lead Only).

Features

KM68V1000CLRI-7L features: 1)Process Technology: 0.4mm CMOS; (2)Organization: 128K×8; (3)Power Supply Voltage: 3.0~3.6V; (4)Low Data Retention Voltage: 2V(Min); (5)Three state output and TTL Compatible; (6)Package Type: 32-SOP-525, 32-TSOP1-0820F/R, 32-TSOP1-0813.4F/R.

Diagrams

KM68V1000CLRI-7L functional block diagram

KM681000B
KM681000B

Other


Data Sheet

Negotiable 
KM681000BLG-7L
KM681000BLG-7L

Other


Data Sheet

Negotiable 
KM681000C
KM681000C

Other


Data Sheet

Negotiable 
KM681000E
KM681000E

Other


Data Sheet

Negotiable 
KM681001A
KM681001A

Other


Data Sheet

Negotiable 
KM681001B
KM681001B

Other


Data Sheet

Negotiable