M29W320DB70N6E

32 Mbit, non-volatile memory, 70ns, 48TSOP, 2.7V to 3.6V, M29W320DB70N6E

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Price:: US $1.45~1.55 / piece [Get Latest Price]

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	US $1.45~1.55

PartNumber:: M29W320DB70N6E

Brand:: STMicroelectronics - ST | Pack: TSOP | D/C: 03+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2012-05-16

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Part Number:M29W320DB70N6E
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Product Summary

The M29W320DB70N6E is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage(2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29W320DB70N6E is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental Program or Erase commands from modifying the memory.

Parametrics

M29W320DB70N6E absolute maxing ratings: (1)TBIAS Temperature under bias: min=-50℃, max=125℃; (2)TSTG Storage temperature: min=-65℃ max=150℃; (3)VIO Input or Output voltage(1)(2): min=-0.6V, max=VCC+0.6V; (4)VCC Supply voltage: min=-0.6V, max=4V; (5)VID Identification voltage: min=-0.6V, max=13.5V; (6)VPP(3) Program voltage: min=-0.6V, max=13.5V.

Features

M29W320DB70N6E features: (1)Supply voltage: VCC=2.7V to 3.6V for Program, Erase and Read; VPP =12V for Fast Program (optional); (2)Access times: 70, 90ns; (3)Programming time: 10μs per byte/word typical; (4)67 Memory Blocks: 1 Boot Block (Top or Bottom Location), 2 Parameter and 64 Main Blocks; (5)Program/Erase controller: Embedded Byte/Word Program algorithms; (6)Erase Suspend and Resume modes: Read and Program another Block during Erase Suspend; (7)Unlock Bypass Program command: Faster Production/Batch Programming; (8)VPP/WP pin for fast Program and Write Protect; (9)Temporary Block Unprotection mode; (10)Common Flash Interface: 64 bit Security code.