M29W320EB70N6E

32MBIT, non-volatile memory, 70nS, 48TSOP, 2.7 to 3.6V, M29W320EB70N6E

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Price:: US $1.40~1.55 / piece [Get Latest Price]

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	US $1.40~1.55

PartNumber:: M29W320EB70N6E

Brand:: STMicroelectronics - ST | Pack: TSOP | D/C: 06+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2012-05-16

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Product Summary

The M29W320EB70N6E is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage(2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode.It features an asymmetrical block architecture. The M29W320EB70N6E has an array of 8 parameter and 63 main blocks. It locates the Parameter Blocks at the top of the memory address space while it locates the Parameter Blocks starting from the bottom.

Parametrics

M29W320EB70N6E absolute maxing ratings: (1)TBIAS Temperature under bias: min=-50℃, max=125℃; (2)TSTG Storage temperature: min=-65℃ max=150℃; (3)VIO Input or Output voltage(1)(2): min=-0.6V, max=VCC+0.6V; (4)VCC Supply voltage: min=-0.6V, max=4V; (5)VID Identification voltage: min=-0.6V, max=13.5V; (6)VPP(3) Program voltage: min=-0.6V, max=13.5V.

Features

M29W320EB70N6E features: (1)Supply voltage: VCC = 2.7V to 3.6V for Program, Erase and Read; VPP =12V for Fast Program (optional); (2)Access times: 70, 90ns; (3)Programming time: 10μs per byte/word typical; Double word/ Quadruple byte Program; (4)Memory Blocks: Memory Array: 63 Main Blocks; 8 Parameter Blocks (Top or Bottom Location); (5)Erase Suspend and Resume modes: Read and Program another Block during Erase Suspend; (6)Unlock Bypass Program command: Faster Production/Batch Programming; (7)VPP/WP pin for fast Program and Write Protect; 8)Temporary Block Unprotection mode; (9)Common Flash Interface: 64 bit Security code.