(China (Mainland))
Product Summary
The M29W640FT70N6H is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage(2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The M29W640FT70N6H is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Blocks can be protected in units of 256 KByte (generally groups of four 64 KByte blocks), to prevent accidental Program or Erase commands from modifying the memory.
Parametrics
M29W640FT70N6H absolute maxing ratings: (1)TBIAS Temperature under bias: min=-50℃, max=125℃; (2)TSTG Storage temperature: min=-65℃ max=150℃; (3)VIO Input or Output voltage(1)(2): min=-0.6V, max=VCC+0.6V; (4)VCC Supply voltage: min=-0.6V, max=4V; (5)VID Identification voltage: min=-0.6V, max=13.5V; (6)VPP(3) Program voltage: min=-0.6V, max=13.5V.
Features
M29W640FT70N6H features: (1)Supply voltage; (2)Asynchronous Random/Page Read; (3)Programming time; (4)135 Memory Blocks; (5)Program/Erase Controller; (6)Program/Erase Suspend and Resume; (7)Unlock Bypass Program command; (8)VPP/WP pin for Fast Program and Write Protect; (9)Temporary Block Unprotection mode; (10)Common Flash Interface; (11)Extended Memory Block; (12)Extra block used as security block or to store additional information; (13)Low power consumption; (14)100,000 Program/Erase cycles per block; (15)Electronic Signature; (16)ECOPACKR packages.
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