IRF8788TRPBF

HEXFET Power MOSFET Silicon Technology, SO-8 package, DC-DC converters

Rated 5 Rating 5 | reviews | Write a review

Price:: US $0.30~0.50 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
	US $0.30~0.50

PartNumber:: IRF8788TRPBF

Brand:: International Rectifier - IR | Pack: SOP | D/C: 09+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

Place Order via Escrow Service

Sold By

Ms. Constance's store

(China (Mainland))

add to my favourite

100% Positive feedback

Detailed seller ratings

Visit Store

Contact Now

Esrcow Service

Place orders confidently and securely via it

Safe payments
Quick and easy transactions
Free service charges

Learn More >>

Previous Next

Products Upload time: 2011-03-31

From Other Seller

Part Number:IRF8788TRPBF
US $0.30 - 0.50
EKXG401ELL6R8MJ16S

US $5.00 - 5.00 / Piece
(0) Remove
EKZE250ELL152MK25S

US $0.10 - 1.00 / Piece
(0) Remove
Quantity:

piece

Product Summary

The IRF8788TRPBF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8788PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for notebook and Netcom applications.

Parametrics

Absolute maximum ratings:(1)Drain-to-Source Voltage, VDS: 30V; (2)Gate-to-Source Voltage, VGS: ±20V; (3)Continuous Drain Current, VGS at 10V, ID at TA = 25℃: 24A; (4)Continuous Drain Current, VGS at 10V, ID at TA = 70℃: 19A; (5)Pulsed Drain Current, IDM: 190A; (6)Power Dissipation, PD at TA = 25℃: 2.5W; (7)Power Dissipation, PD at TA = 70℃: 1.6W; (8)Linear Derating Factor: 0.02W/℃; (9)Operating Junction and Storage Temperature Range, TJ, TSTG: -55 to + 150℃.

Features

Features:(1)Very Low Gate Charge; (2)Very Low RDS(on) at 4.5V VGS; (3)Ultra-Low Gate Impedance; (4)Fully Characterized Avalanche Voltage and Current; (5)20V VGS Max. Gate Rating; (6)100% tested for Rg; (7)Lead-Free.